Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam; Russian Physics Journal; Vol. 56, iss. 1

Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam; Russian Physics Journal; Vol. 56, iss. 1

Opis bibliograficzny
Parent link:	Russian Physics Journal: Scientific Journal Vol. 56, iss. 1.— 2013.— [P. 62-66]
Korporacja:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Kolejni autorzy:	Oleshko V. I. Vladimir Ivanovich, Gorina S. G., Korepanov V. I. Vladimir Ivanovich, Lisitsyn V. M. Viktor Mikhailovich, Prudaev I. A., Tolbanov O. P.
Streszczenie:	Title screen The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone. Режим доступа: по договору с организацией-держателем ресурса
Język:	angielski
Wydane:	2013
Hasła przedmiotowe:	электронный ресурс труды учёных ТПУ
Dostęp online:	http://dx.doi.org/10.1007/s11182-013-9995-6
Format:	Elektroniczne Rozdział
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639430

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