Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam
| Parent link: | Russian Physics Journal: Scientific Journal Vol. 56, iss. 1.— 2013.— [P. 62-66] |
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| Corporate Author: | |
| Other Authors: | , , , , , |
| Summary: | Title screen The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone. Режим доступа: по договору с организацией-держателем ресурса |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11182-013-9995-6 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639430 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 639430 | ||
| 005 | 20250217103523.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\3916 | ||
| 090 | |a 639430 | ||
| 100 | |a 20150311d2013 k||y0rusy50 ba | ||
| 101 | 0 | |a eng | |
| 102 | |a US | ||
| 135 | |a drnn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam |d Люминесценция тонкопленочных светодиодных структур при возбуждении сильноточным электронным пучком |f V. I. Oleshko [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 66 (9 tit.)] | ||
| 330 | |a The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal |o Scientific Journal | ||
| 463 | |t Vol. 56, iss. 1 |v [P. 62-66] |d 2013 | ||
| 510 | 1 | |a Люминесценция тонкопленочных светодиодных структур при возбуждении сильноточным электронным пучком |z rus | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Oleshko |b V. I. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1948- |g Vladimir Ivanovich |3 (RuTPU)RU\TPU\pers\33783 |9 17381 | |
| 701 | 1 | |a Gorina |b S. G. | |
| 701 | 1 | |a Korepanov |b V. I. |c specialist in the field of lightning engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1947- |g Vladimir Ivanovich |3 (RuTPU)RU\TPU\pers\33774 |9 17372 | |
| 701 | 1 | |a Lisitsyn |b V. M. |c physicist |c Russian physicist |c Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1939- |g Viktor Mikhailovich |3 (RuTPU)RU\TPU\pers\28330 |9 13239 | |
| 701 | 1 | |a Prudaev |b I. A. | |
| 701 | 1 | |a Tolbanov |b O. P. | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Кафедра лазерной и световой техники (ЛиСТ) |3 (RuTPU)RU\TPU\col\18690 |
| 801 | 2 | |a RU |b 63413507 |c 20180305 |g RCR | |
| 856 | 4 | |u http://dx.doi.org/10.1007/s11182-013-9995-6 | |
| 942 | |c CF | ||