New Features of Diffracted Channeling Radiation from Electrons in Si and LiF Crystals; International Journal of Modern Physics A; Vol. 25, iss. supp01
| Parent link: | International Journal of Modern Physics A: Scientific Journal Vol. 25, iss. supp01.— 2010.— [P. 157-164] |
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| প্রধান লেখক: | |
| অন্যান্য লেখক: | , |
| সংক্ষিপ্ত: | Title screen It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2010
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1142/S0217751X10050007 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639105 |
| সংক্ষিপ্ত: | Title screen It is shown that the band structure of transverse energy levels for (111) planar channeled electrons in the Si and LiF crystals qualitatively changes the angular distributions of X-rays emitted at the Bragg angles compared to calculations, which do not take into account this effect. Режим доступа: по договору с организацией-держателем ресурса |
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| ডিওআই: | 10.1142/S0217751X10050007 |