Studies of relativistic electron scattering at planar alignment in a thin Si crystal; Physics Letters A; Vol. 378, iss. 21

Studies of relativistic electron scattering at planar alignment in a thin Si crystal; Physics Letters A; Vol. 378, iss. 21

Detalles Bibliográficos
Parent link:Physics Letters A: Scientific Journal
Vol. 378, iss. 21.— 2014.— [P. 1520–1525]
Autor Principal: Takabayashi Y.
Outros autores: Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:Title screen
Experiments on 255-MeV electron scattering under (220) planar channeling conditions in a Si crystal were carried out at the linac of the SAGA Light Source. The spatial and angular distributions of electrons penetrating through a 20-µm thick Si crystal at different incident angles with respect to the (220) plane were measured, and features characteristic of the planar alignment were identified. The experimental results were compared with computer simulations, and showed a reasonable agreement. A comparison with doughnut scattering at axial channeling in the same crystal was also performed. It was confirmed that the planar alignment effect is weaker than the axial alignment effect. These studies are important for understanding the basic mechanism of electron scattering and radiation processes in a crystal.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:inglés
Publicado: 2014
Subjects:
электронный ресурс
труды учёных ТПУ
Acceso en liña:http://www.sciencedirect.com/science/article/pii/S0375960114002989
Formato: MixedMaterials Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639041

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