Electronic structure of a-Al2O3 in the bulk and on the surface
| Parent link: | Russian Physics Journal: Scientific Journal Vol. 48, iss. 11.— 2005.— [P. 1127-1133] |
|---|---|
| Autor principal: | Kulkova S. E. |
| Altres autors: | Zagorskaya L. Yu. Lubov Yur'evna, Shein I. R. |
| Sumari: | Title screen Using a full-potential method of attaching plane waves, the electronic structure of Al 2 O 3 is calculated in a corundum structure in the bulk and on the surface (0001). It is shown that the calculations consistently reproduce the properties with respect to the experiment. The effect of surface relaxation on the structure of subsurface states is discussed. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | anglès |
| Publicat: |
2005
|
| Matèries: | |
| Accés en línia: | http://link.springer.com/article/10.1007%2Fs11182-006-0036-6 |
| Format: | Electrònic Capítol de llibre |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638931 |
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