Electronic structure of a-Al2O3 in the bulk and on the surface; Russian Physics Journal; Vol. 48, iss. 11
| Parent link: | Russian Physics Journal: Scientific Journal Vol. 48, iss. 11.— 2005.— [P. 1127-1133] |
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| Autor principal: | |
| Outros Autores: | , |
| Resumo: | Title screen Using a full-potential method of attaching plane waves, the electronic structure of Al 2 O 3 is calculated in a corundum structure in the bulk and on the surface (0001). It is shown that the calculations consistently reproduce the properties with respect to the experiment. The effect of surface relaxation on the structure of subsurface states is discussed. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglês |
| Publicado em: |
2005
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| Assuntos: | |
| Acesso em linha: | http://link.springer.com/article/10.1007%2Fs11182-006-0036-6 |
| Formato: | Recurso Eletrônico Capítulo de Livro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638931 |
| Resumo: | Title screen Using a full-potential method of attaching plane waves, the electronic structure of Al 2 O 3 is calculated in a corundum structure in the bulk and on the surface (0001). It is shown that the calculations consistently reproduce the properties with respect to the experiment. The effect of surface relaxation on the structure of subsurface states is discussed. Режим доступа: по договору с организацией-держателем ресурса |
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