Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 6

Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 6

Bibliografiske detaljer
Parent link:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 1982- Vol. 8, iss. 6.— 2014.— [P. 1168-1173]
Corporate Authors:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
Andre forfattere:	Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich, Pavlov S. K. Sergey Konstantinovich
Summary:	Title screen The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established. Режим доступа: по договору с организацией-держателем ресурса
Sprog:	engelsk
Udgivet:	2014
Fag:	электронный ресурс труды учёных ТПУ
Online adgang:	http://link.springer.com/article/10.1134/S1027451014060068
Format:	Electronisk Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638352

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