Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 6
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 1982- Vol. 8, iss. 6.— 2014.— [P. 1168-1173] |
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| Coauteurs: | , , |
| Andere auteurs: | , , , |
| Samenvatting: | Title screen The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established. Режим доступа: по договору с организацией-держателем ресурса |
| Taal: | Engels |
| Gepubliceerd in: |
2014
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| Onderwerpen: | |
| Online toegang: | http://link.springer.com/article/10.1134/S1027451014060068 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638352 |