Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon
| Parent link: | Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 1982- Vol. 8, iss. 6.— 2014.— [P. 1168-1173] |
|---|---|
| Autores Corporativos: | , , |
| Otros Autores: | , , , |
| Sumario: | Title screen The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established. Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2014
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| Materias: | |
| Acceso en línea: | http://link.springer.com/article/10.1134/S1027451014060068 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638352 |
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| 200 | 1 | |a Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon |f A. V. Kabyshev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [Ref.: p. 1173 (33 tit.)] | ||
| 330 | |a The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques |d 1982- | ||
| 463 | |t Vol. 8, iss. 6 |v [P. 1168-1173] |d 2014 | ||
| 610 | 1 | |a электронный ресурс | |
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| 701 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
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