Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon

Influence of the High-Intensity Short-Pulse Implantation of Ions on the Properties of Polycrystalline Silicon

Bibliographic Details
Parent link:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.— , 1982-
Vol. 8, iss. 6.— 2014.— [P. 1168-1173]
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
Other Authors: Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich, Pavlov S. K. Sergey Konstantinovich
Summary:Title screen
The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.
Режим доступа: по договору с организацией-держателем ресурса
Language:English
Published: 2014
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://link.springer.com/article/10.1134/S1027451014060068
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=638352
Description
Summary:Title screen
The electrical and photoelectric properties of polycrystalline Si are studied after the high-intensity short-pulse implantation of C ions. It is established that annealing in vacuum (10–2 Pa, 300–1200 K) affects the characteristics of the surface dark conductivity and photoconductivity of Si. The optimal conditions for the thermal vacuum treatment of samples in the case when properties most stable to thermal effects and field excitement are reached are determined. The probable reasons for the change in the electrical and photoelectric characteristics of Si are established.
Режим доступа: по договору с организацией-держателем ресурса

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