Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
| Parent link: | Journal of Physics: Conference Series Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia.— 2014.— [012046, 5 p.] |
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| Other Authors: | , , , , |
| Summary: | Title screen Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017–2.1•1021 eV–1cm{–3}. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007–0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jumplength decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra. Режим доступа: по договору с организацией-держателем ресурса |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://iopscience.iop.org/1742-6596/552/1/012046 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637937 |
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| 200 | 1 | |a Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge |f F. V. Konusov [et al.] | |
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| 320 | |a [Ref.: 19 tit.] | ||
| 330 | |a Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·1017–2.1•1021 eV–1cm{–3}. Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007–0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jumplength decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\3526 |t Journal of Physics: Conference Series | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\3527 |t Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia |v [012046, 5 p.] |d 2014 | |
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| 701 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Linnik |b S. A. |c physicist |c Engineer-Researcher of Tomsk Polytechnic University |f 1985- |g Stepan Andreevich |3 (RuTPU)RU\TPU\pers\32877 |9 16725 | |
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| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
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