Transport Charge of Gallium Arsenide Films Synthesized on Polycrystalline Silicon by Ionics Ablation; EFRE-2014: 12th International Conference on Modification of Materials with Particle Beams and Plasma Flows
समान संसाधन
Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
प्रकाशित: (2014)
प्रकाशित: (2014)
The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation; Известия вузов. Физика; Т. 55, № 12-2
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प्रकाशित: (2012)
द्वारा: Kabyshev A. V. Alexander Vasilievich
प्रकाशित: (2012)
Gallium arsenide digital integrated circuit design
द्वारा: Long Stephen I
प्रकाशित: (New York, McGraw-Hill, 1990)
द्वारा: Long Stephen I
प्रकाशित: (New York, McGraw-Hill, 1990)
Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 1
द्वारा: Kabyshev A. V. Alexander Vasilievich
प्रकाशित: (2014)
द्वारा: Kabyshev A. V. Alexander Vasilievich
प्रकाशित: (2014)
A complex of spectrochemical, mass-spectrometric and atomic-absorption methods for the analysis of thin layers of gallium arsenide and silicon semiconductors: [offprint]
द्वारा: Yudelevich I. G.
प्रकाशित: (Vienna, Springer-Verlag, 1978)
द्वारा: Yudelevich I. G.
प्रकाशित: (Vienna, Springer-Verlag, 1978)
Application of gallium arsenide detectors in digital mammography apparatus; KORUS 2005
द्वारा: Nam I. F. Irina Feliksovna
प्रकाशित: (2005)
द्वारा: Nam I. F. Irina Feliksovna
प्रकाशित: (2005)
Peculiarities Of Electrophysical Properties Of Arsenide Gallium Films Deposited Under Nonequilibrium Conditions; Eurasian Physical Technical Journal; № 2 (14)
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Ionic Liquids in Flow Assurance
द्वारा: Lal, Bhajan, और अन्य
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द्वारा: Lal, Bhajan, और अन्य
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On the zero-charge potential of gallium in aqueous solutions and the origin of high capacitance at the gallium/solution interface: [offprint]
द्वारा: Bagotskaya I. A.
प्रकाशित: (Oxford, Pergamon Press, 1968)
द्वारा: Bagotskaya I. A.
प्रकाशित: (Oxford, Pergamon Press, 1968)
Glass composite modified with silicon carbide and gallium arsenide, that absorbs electromagnetic radiation; IOP Conference Series: Materials Science and Engineering; Vol. 1019 : 14th International Forum on Strategic Technology (IFOST 2019)
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द्वारा: Ayzenshtat G. I.
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Ternary composite electrode materials for electrochemical biosensors; Systems with Fast Ionic Transport
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Research of the creation opportunity of matrix X-ray gallium arsenide detector; International Siberian Conference on Control and Communications (SIBCON-2009), Russia, Tomsk, March 27−28, 2009
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Peculiarities of E4-centers (EC - 0.76 eV) formation nearby the gallium arsenide-metal boundary; Радиационно-термические эффекты и процессы в неорганических материалах
द्वारा: Peshev V. V.
प्रकाशित: (2006)
द्वारा: Peshev V. V.
प्रकाशित: (2006)
Synthesis of silicon carbide nanopowders in free flowing plasma jet with different energy levels; Energy Fluxes and Radiation Effects (EFRE-2016)
प्रकाशित: (2016)
प्रकाशित: (2016)
Optical properties and urbach rule of GaAs films deposited on polycor by pulsed ion ablation; 10th International Conference on Modification of materials with Particle Beams and Plasma Flows, Tomsk, September 19-24, 2010
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Fast Charging and Resilient Transportation Infrastructures in Smart Cities
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द्वारा: Gabbar, Hossam A.
प्रकाशित: (2022)
Coating deposition using vacuum arc and ablation metal plasma; 9th International Conference on Modification of Materials with Particle Beams and Plasma Flows, Tomsk, 21-21September 2008
द्वारा: Ryabchikov A. I. Aleksandr Ilyich
प्रकाशित: ()
द्वारा: Ryabchikov A. I. Aleksandr Ilyich
प्रकाशित: ()
The detecting module based on gallium arsenide detectors in digital mammography; 6th Annual International Siberian Workshop and Tutorials on Electron Devices and Materials (EDM'2005), Erlagol, Altai - July 1-5, 2005
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प्रकाशित: (2005)
द्वारा: Nam I. F. Irina Feliksovna
प्रकाशित: (2005)
Properties of basaltic fibers after ionic irradiation; 1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials; Vol. 3: 5-th Conference on Modification of Materials with Particle Beams and Plasma Flows
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Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams; Optical Materials: X; Vol. 25
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Kinetic Theory of Gases in Shear Flows; Nonlinear Transport
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प्रकाशित: (Boston, Kluwer Academic Publishers, 2003)
द्वारा: Garzó V. Vincente
प्रकाशित: (Boston, Kluwer Academic Publishers, 2003)
Deposition of biocompatible calcium-phosphate coatings by high power lon beam ablation plasma; 9th International Conference on Modification of Materials with Particle Beams and Plasma Flows, Tomsk, 21-21September 2008
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प्रकाशित: ()
Electrical and Photoelectric Properties of Polycrystalline Diamond Films, Deposited by Abnormal Glow Discharge; EFRE-2014: 16th International Conference on Radiation Physics and Chemistry of Condensed Matter
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The peculiarities of structural modificaions of CVD polycrystalline diamond coatings by heavy doping with boron; Energy Fluxes and Radiation Effects (EFRE-2016)
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द्वारा: Okhotnikov V. V. Vitaly Vladimirovich
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Investigation of Plasma Filter Influence on Ions Charge State of DC Vacuum Arc Plasma; 7 International conference on modification of materials with particle beams and plasma flows
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A Contribution to the Problem of the Sensitivity of the Space Charge on the Electrical Ageing of Irradiated Polymer Dielectrics; 7 International conference on modification of materials with particle beams and plasma flows
द्वारा: Bychkov P. N. Petr Nikolaevich
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द्वारा: Bychkov P. N. Petr Nikolaevich
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Structure–Transport Correlation Reveals Anisotropic Charge Transport in Coupled PbS Nanocrystal Superlattices; Advanced Materials; Vol. 32, iss. 36
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Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam; Journal of Physics: Conference Series; Vol. 552 : International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
प्रकाशित: (2014)
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The role of surface defects in the charge transport in organic solar cells based on oxidized indium thin films; Surfaces and Interfaces; Vol. 31
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The influence of ion irradiation on the properties of ceramic silicon carbide; Energy Fluxes and Radiation Effects (EFRE-2016)
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Possibility of Implementation of the Complete Cycle of Synthesizing Bulk Polycrystalline Titanium Nitride with Submicron Composition by Plasmodynamic Methods; Russian Physics Journal; Vol. 55, iss. 9
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The plasmodinamic syntesis of silicon carbide; 3rd International Congress on Radiation Physics and Chemistry of Condensed Matter, High Current Electronics and Modification of Materials with Particle Beams and Plasma Flows
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द्वारा: Nikitin D. S.
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Green Industrial Applications of Ionic Liquids
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प्रकाशित: (Boston, Kluwer Academic Publishers, 2002)
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Luminescent properties and morphology of ZnWO[4] powders synthesized by hydrothermal method; Energy Fluxes and Radiation Effects (EFRE-2016)
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Recent Advances in Laser Ablation ICP-MS for Archaeology
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समान संसाधन
-
Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
प्रकाशित: (2014) -
The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation; Известия вузов. Физика; Т. 55, № 12-2
द्वारा: Kabyshev A. V. Alexander Vasilievich
प्रकाशित: (2012) -
Gallium arsenide digital integrated circuit design
द्वारा: Long Stephen I
प्रकाशित: (New York, McGraw-Hill, 1990) -
Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 1
द्वारा: Kabyshev A. V. Alexander Vasilievich
प्रकाशित: (2014) -
A complex of spectrochemical, mass-spectrometric and atomic-absorption methods for the analysis of thin layers of gallium arsenide and silicon semiconductors: [offprint]
द्वारा: Yudelevich I. G.
प्रकाशित: (Vienna, Springer-Verlag, 1978)