Transport Charge of Gallium Arsenide Films Synthesized on Polycrystalline Silicon by Ionics Ablation; EFRE-2014: 12th International Conference on Modification of Materials with Particle Beams and Plasma Flows

অনুরূপ উপাদানগুলি

• The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation; Известия вузов. Физика; Т. 55, № 12-2
  অনুযায়ী: Kabyshev A. V. Alexander Vasilievich
  প্রকাশিত: (2012)
• Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
  প্রকাশিত: (2014)
• Gallium arsenide digital integrated circuit design
  অনুযায়ী: Long Stephen I
  প্রকাশিত: (New York, McGraw-Hill, 1990)
• Thermal and chemical passivation of gallium-arsenide films deposited from ablation plasma; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 8, iss. 1
  অনুযায়ী: Kabyshev A. V. Alexander Vasilievich
  প্রকাশিত: (2014)
• A complex of spectrochemical, mass-spectrometric and atomic-absorption methods for the analysis of thin layers of gallium arsenide and silicon semiconductors: [offprint]
  অনুযায়ী: Yudelevich I. G.
  প্রকাশিত: (Vienna, Springer-Verlag, 1978)