Modeling of initial stage of ion implantation process. Isothermal approximation; Известия вузов. Физика; Т. 55, № 5-2

Modeling of initial stage of ion implantation process. Isothermal approximation; Известия вузов. Физика; Т. 55, № 5-2

Dades bibliogràfiques
Parent link:	Известия вузов. Физика: научный журнал/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1957- Т. 55, № 5-2.— 2012.— [С. 108-111]
Autor principal:	Ilina E. S. Elena Sergeevna
Autor corporatiu:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ)
Altres autors:	Knyazeva A. G. Anna Georgievna, Demidov V. N. Valery Nikolaevich
Sumari:	Title screen The initial stage of the process of ion implantation in the isothermal approximation is investigated. As a result, the examples of concentration distribution were obtained at different moments, taking into account the effect of mechanical disturbance and coupling effect. Режим доступа: по договору с организацией-держателем ресурса
Idioma:	anglès
Publicat:	2012
Matèries:	электронный ресурс труды учёных ТПУ
Accés en línia:	http://elibrary.ru/item.asp?id=20133321
Format:	Electrònic Capítol de llibre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637623

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