Microwave Pulse Series Compression with Second Stage Cavity Being Transmission – Type One; 16th Symposium on High Current Electronics, September 19-24, 2010

Մատենագիտական մանրամասներ
Parent link:16th Symposium on High Current Electronics, September 19-24, 2010.— 2010.— [P. 470-473]
Այլ հեղինակներ: Artemenko S. N. Sergey Nikolaevich, Avgustinovich V. A. Vladimir Andreevich, Novikov S. A. Sergey Avtonomovich, Chumerin P. Yu. Pavel Yurievich, Yushkov Y. G. Yuri Georgievich
Ամփոփում:Title screen
The S-band setup of microwave seriescompression contained the overmoded cavity as thefirst stage and the output transmission – type singlemode cavity. It was shown that under some conditionsthe system produces pulses of different pulsewidths, envelopes and power values exceeding thepower of first cavity output signal. Microwavepulses of 20…40 ns pulse width, 60…130 MWpulse power at 15…18 dB amplification were obtainedin the system test model. The envelopes canbe varied including the sine modulated exponentiallydecaying and Gaussian shapes.
Режим доступа: по договору с организацией-держателем ресурса
Լեզու:անգլերեն
Հրապարակվել է: 2010
Շարք:High Pover Microwaves
Խորագրեր:
Առցանց հասանելիություն:http://www.hcei.tsc.ru/conf/2010/cat/proc_2010/shce/470-473.pdf
Ձևաչափ: MixedMaterials Էլեկտրոնային Գրքի գլուխ
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637592

MARC

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330 |a The S-band setup of microwave seriescompression contained the overmoded cavity as thefirst stage and the output transmission – type singlemode cavity. It was shown that under some conditionsthe system produces pulses of different pulsewidths, envelopes and power values exceeding thepower of first cavity output signal. Microwavepulses of 20…40 ns pulse width, 60…130 MWpulse power at 15…18 dB amplification were obtainedin the system test model. The envelopes canbe varied including the sine modulated exponentiallydecaying and Gaussian shapes. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
463 |t 16th Symposium on High Current Electronics, September 19-24, 2010  |o Proceedings  |f Institute of High Current Electronics  |v [P. 470-473]  |d 2010 
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