Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics

Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics

Bibliographic Details
Parent link:Russian Physics Journal
Vol. 43, iss. 3.— 2000.— [С. 241-249]
Main Author: Kabyshev A. V. Alexander Vasilievich
Other Authors: Konusov F. V. Fedor Valerievich, Lopatin V. V. Vladimir Vasilyevich
Summary:Title screen
The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride and Al 2O3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2000
Subjects:
электронный ресурс
труды учёных ТПУ
Online Access:http://link.springer.com/article/10.1007/BF02509613
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637566

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