Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics; Russian Physics Journal; Vol. 43, iss. 3
| Parent link: | Russian Physics Journal Vol. 43, iss. 3.— 2000.— [С. 241-249] |
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| Hoofdauteur: | |
| Andere auteurs: | , |
| Samenvatting: | Title screen The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride and Al 2O3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood. Режим доступа: по договору с организацией-держателем ресурса |
| Taal: | Engels |
| Gepubliceerd in: |
2000
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| Onderwerpen: | |
| Online toegang: | http://link.springer.com/article/10.1007/BF02509613 |
| Formaat: | Elektronisch Hoofdstuk |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637566 |
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| 200 | 1 | |a Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics |f A. V. Kabyshev, F. V. Konusov, V. V. Lopatin | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [Ref.: p. 249 (33 tit.)] | ||
| 330 | |a The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride and Al 2O3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 43, iss. 3 |v [С. 241-249] |d 2000 | ||
| 606 | 1 | |a Диэлектрики |x Физико-механические свойства |2 stltpush |3 (RuTPU)RU\TPU\subj\9774 |9 36948 | |
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| 700 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Lopatin |b V. V. |c Doctor of physical and mathematical sciences |c Professor of Tomsk Polytechnic University (TPU) |f 1947- |g Vladimir Vasilyevich |3 (RuTPU)RU\TPU\pers\30091 | |
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