Energetic states in the boron nitride band gap; Journal of Physics and Chemistry of Solids; Vol. 53, iss. 6
| Parent link: | Journal of Physics and Chemistry of Solids: Scientific Journal Vol. 53, iss. 6.— 1992.— [P. 847–854] |
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| Հիմնական հեղինակ: | |
| Այլ հեղինակներ: | |
| Ամփոփում: | Title screen Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like Pyrolytic Boron Nitride (PBN) produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using thermally activated spectroscopy of luminescence and conduction, and their positions in the band gap are determined from the temperature dependences of the diffusive current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. A scheme for electron-hole and hole-electron transitions by luminescence is suggested. Режим доступа: по договору с организацией-держателем ресурса |
| Լեզու: | անգլերեն |
| Հրապարակվել է: |
1992
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| Խորագրեր: | |
| Առցանց հասանելիություն: | http://www.sciencedirect.com/science/article/pii/002236979290199N |
| Ձևաչափ: | Էլեկտրոնային Գրքի գլուխ |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637548 |