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|a 637391
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|a 20140908d2009 k y0rusy50 ca
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|a eng
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|a RU
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|a drcn ---uucaa
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|a i
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|a b
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|a Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation
|f A. V. Kabyshev [et al.]
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|a Text
|c electronic
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1 |
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|a Структура и свойства покрытий
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|a Заглавие с титульного листа
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|a [Библиогр.: с. 242 (17 назв.)]
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|a A singularities and advantages of the optical, photoelectric and electrical properties of GaAs in comparison with other available materials for electronics, for example, silicon allow to manufacture on it base the devices having an advanced characteristics. The GaAs for electronics, obtained from the dense ablation plasma, possess some preferences as compared to material manufactured by traditional methods of vacuum deposition. The electrical characteristics of GaAs produced by chemical deposition were extensively studied. Purpose of this work is investigation the current-voltage characteristics of thin films of GaAs, deposited on polycrystalline corundum (polycor) from plasma forming the power ions bunch and determination of the thermal vacuum annealing effect on photoelectric and electrical properties of films. Peculiarities of optical, photoelectric and current-voltage characteristics of films obtained by ions ablation are determined by deposition conditions and resistance of initial target GaAs. The transitions between the states with low- and high conduction were revealed directly after deposition in films having the optical properties similar to amorphous materials and/or after annealing in films with properties similar to initial target GaAs. Behavior of current-voltage characteristics at vacuum annealing correlates with Schottky barrier height and photosensitivity and is accompanies of the transport mechanism change. The stable properties of films are formed at its dark conduction 10-10-10-8 s and after annealing at Tan=600-700 K.
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| 337 |
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|a Adobe Reader
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| 463 |
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|t Взаимодействие излучений с твердым телом
|o материалы 8-й Международной конференции, 23-25 сентября 2009 г., г. Минск
|f Белорусский государственный университет (БГУ)
|v [С. 240-243]
|d 2009
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| 610 |
1 |
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|a электронный ресурс
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| 610 |
1 |
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|a труды учёных ТПУ
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| 610 |
1 |
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|a электроперенос
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| 610 |
1 |
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|a абляция
|
| 610 |
1 |
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|a арсенид галлия
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| 610 |
1 |
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|a электрические свойства
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| 610 |
1 |
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|a отжиг
|
| 701 |
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1 |
|a Kabyshev
|b A. V.
|c specialist in the field of electric power engineering
|c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
|f 1958-
|g Alexander Vasilievich
|3 (RuTPU)RU\TPU\pers\32572
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| 701 |
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1 |
|a Konusov
|b F. V.
|c physicist
|c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences
|f 1958-
|g Fedor Valerievich
|3 (RuTPU)RU\TPU\pers\32570
|9 16491
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| 701 |
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1 |
|a Lozhnikov
|b S. N.
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| 701 |
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1 |
|a Remnev
|b G. E.
|c physicist
|c Professor of Tomsk Polytechnic University, Doctor of technical sciences
|f 1948-
|g Gennady Efimovich
|3 (RuTPU)RU\TPU\pers\31500
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| 701 |
|
1 |
|a Saltymakov
|b M. S.
|c physicist
|c Junior researcher of Tomsk Polytechnic University
|f 1982-
|g Maksim Sergeevich
|3 (RuTPU)RU\TPU\pers\34301
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| 801 |
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2 |
|a RU
|b 63413507
|c 20151208
|g RCR
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| 850 |
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|a 63413507
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| 856 |
4 |
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|u http://inis.iaea.org/search/search.aspx?orig_q=RN:41006860
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| 942 |
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|c CF
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