Optical properties and urbach rule of GaAs films deposited on polycor by pulsed ion ablation
| Parent link: | 10th International Conference on Modification of materials with Particle Beams and Plasma Flows, Tomsk, September 19-24, 2010.— 2010.— [P. 567-570] |
|---|---|
| Beste egile batzuk: | Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Lozhnikov S. N., Remnev G. E. Gennady Efimovich, Saltimakov M. S. |
| Gaia: | Title screen |
| Hizkuntza: | ingelesa |
| Argitaratua: |
2010
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| Gaiak: | |
| Sarrera elektronikoa: | http://www.hcei.tsc.ru/conf/2010/cat/proc_2010/cmm/567-570.pdf |
| Formatua: | Baliabide elektronikoa Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637387 |
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Antzeko izenburuak
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Photoelectrical properties of GaAs films deposited on polycor by pulsed ions ablation; Известия вузов. Физика; Т. 52, № 8/2 (приложение)
Argitaratua: (2009) -
Optical properties of GaAs films deposited via pulsed ion ablation; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 5, iss. 2
nork: Kabyshev A. V. Alexander Vasilievich
Argitaratua: (2011) -
Singularities of current-voltage characteristics of GaAs films fabricated by pulsed ions ablation; Взаимодействие излучений с твердым телом
Argitaratua: (2009) -
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nork: Kabyshev A. V. Alexander Vasilievich
Argitaratua: (2007) -
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