Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation

গ্রন্থ-পঞ্জীর বিবরন
Parent link:	Russian Physics Journal Vol. 56, iss. 6.— 2013.— [P. 607-611]
প্রধান লেখক:	Kabyshev A. V. Alexander Vasilievich
সংস্থা লেখক:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
অন্যান্য লেখক:	Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich
সংক্ষিপ্ত:	Title screen Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed. Режим доступа: по договору с организацией-держателем ресурса
ভাষা:	ইংরেজি
প্রকাশিত:	2013
বিষয়গুলি:	электронный ресурс труды учёных ТПУ ion implantation photoconductivity photosensitivity silicon vacuum annealing
অনলাইন ব্যবহার করুন:	http://dx.doi.org/10.1007/s11182-013-0075-8
বিন্যাস:	বৈদ্যুতিক গ্রন্থের অধ্যায়
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637368

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