Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6
| Parent link: | Russian Physics Journal Vol. 56, iss. 6.— 2013.— [P. 607-611] |
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| প্রধান লেখক: | |
| সংস্থা লেখক: | , , |
| অন্যান্য লেখক: | , |
| সংক্ষিপ্ত: | Title screen Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2013
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1007/s11182-013-0075-8 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637368 |
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