Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6

Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6

Xehetasun bibliografikoak
Parent link:	Russian Physics Journal Vol. 56, iss. 6.— 2013.— [P. 607-611]
Egile nagusia:	Kabyshev A. V. Alexander Vasilievich
Egile korporatiboa:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
Beste egile batzuk:	Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich
Gaia:	Title screen Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed. Режим доступа: по договору с организацией-держателем ресурса
Hizkuntza:	ingelesa
Argitaratua:	2013
Gaiak:	электронный ресурс труды учёных ТПУ ion implantation photoconductivity photosensitivity silicon vacuum annealing
Sarrera elektronikoa:	http://dx.doi.org/10.1007/s11182-013-0075-8
Formatua:	Baliabide elektronikoa Liburu kapitulua
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637368

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