Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6
| Parent link: | Russian Physics Journal Vol. 56, iss. 6.— 2013.— [P. 607-611] |
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| Autor principal: | |
| Autores Corporativos: | , , |
| Otros Autores: | , |
| Sumario: | Title screen Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed. Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2013
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| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.1007/s11182-013-0075-8 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637368 |
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| 200 | 1 | |a Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation |f A. V. Kabyshev, F. V. Konusov, G. E. Remnev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [Ref.: p. 611 (24 tit.)] | ||
| 330 | |a Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Russian Physics Journal | ||
| 463 | |t Vol. 56, iss. 6 |v [P. 607-611] |d 2013 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a ion implantation | |
| 610 | 1 | |a photoconductivity | |
| 610 | 1 | |a photosensitivity | |
| 610 | 1 | |a silicon | |
| 610 | 1 | |a vacuum annealing | |
| 700 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
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