Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6

Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6

Bibliografiset tiedot
Parent link:Russian Physics Journal
Vol. 56, iss. 6.— 2013.— [P. 607-611]
Päätekijä: Kabyshev A. V. Alexander Vasilievich
Yhteisötekijät: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
Muut tekijät: Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich
Yhteenveto:Title screen
Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
Режим доступа: по договору с организацией-держателем ресурса
Kieli:englanti
Julkaistu: 2013
Aiheet:
электронный ресурс
труды учёных ТПУ
ion implantation
photoconductivity
photosensitivity
silicon
vacuum annealing
Linkit:http://dx.doi.org/10.1007/s11182-013-0075-8
Aineistotyyppi: Elektroninen Kirjan osa
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637368
Kuvaus
Yhteenveto:Title screen
Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1007/s11182-013-0075-8

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