Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, & Remnev G. E. Gennady Efimovich. (2013). Electrical and Photoelectric Properties of Polycrystalline Silicon after High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, iss. 6. 2013. https://doi.org/10.1007/s11182-013-0075-8
Chicago Style (17th ed.) CitationKabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, and Remnev G. E. Gennady Efimovich. Electrical and Photoelectric Properties of Polycrystalline Silicon After High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, Iss. 6. 2013, 2013. https://doi.org/10.1007/s11182-013-0075-8.
MLA (9th ed.) CitationKabyshev A. V. Alexander Vasilievich, et al. Electrical and Photoelectric Properties of Polycrystalline Silicon After High-Intensity Short-Pulse Ion Implantation; Russian Physics Journal; Vol. 56, Iss. 6. 2013, 2013. https://doi.org/10.1007/s11182-013-0075-8.