High Intensive Short Pulsed Ions Implantation Effect on Electrical and Photoelectrical Properties of Polycrystalline Silicon

Bibliographic Details
Parent link:	Известия вузов. Физика: научный журнал.— , 1957- Т. 55, № 12-3.— 2012.— [С. 58-61]
Main Author:	Kabyshev A. V. Alexander Vasilievich
Corporate Authors:	Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра электроснабжения промышленных предприятий (ЭПП), Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Лаборатория № 1, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра водородной энергетики и плазменных технологий (ВЭПТ)
Other Authors:	Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich
Summary:	Title screen The electrical and photoelectrical properties of the polycrystalline silicon after high intensive short pulsed implantation of carbon ions were investigated. A vacuum annealing effect under the pressure of 10 -2 Pa and temperature of 3001200 K on the characteristics of the surface dark conduction and photoconduction was determined. We determined the optimal conditions of thermal treatment during which we achieved changes in the properties more stable to thermal and field excitation. The implantation affects the silicon properties owing to accumulation of the radiation damage and the formation of the inclusions of new nanosized phases. The influence of the induced structural-phases inhomogeneities on the properties is determined by the dose of the incorporated ions and annealing conditions. The type of the conduction changes depending on concentration of the defects. The change in properties after annealing obeys to the regularities which are proper for the ion-heat modification of materials. After annealing in the temperature interval of 300-700 K the alternations in the characteristics are stipulated by dissociation of the donor defect complexes. The nanocrystals sintered at 700-1000 K and their size growth stably affect the characteristics. Режим доступа: по договору с организацией-держателем ресурса
Published:	2012
Subjects:	электронный ресурс труды учёных ТПУ поликристаллический кремний ионы имплантация светочувствительность радиационные дефекты вакуумный отжиг
Online Access:	http://elibrary.ru/item.asp?id=19015552
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637365