High Intensive Short Pulsed Ions Implantation Effect on Electrical and Photoelectrical Properties of Polycrystalline Silicon; Известия вузов. Физика; Т. 55, № 12-3
| Parent link: | Известия вузов. Физика: научный журнал.— , 1957- Т. 55, № 12-3.— 2012.— [С. 58-61] |
|---|---|
| Autor Principal: | |
| Corporate Authors: | , , |
| Outros autores: | , |
| Summary: | Title screen The electrical and photoelectrical properties of the polycrystalline silicon after high intensive short pulsed implantation of carbon ions were investigated. A vacuum annealing effect under the pressure of 10 -2 Pa and temperature of 3001200 K on the characteristics of the surface dark conduction and photoconduction was determined. We determined the optimal conditions of thermal treatment during which we achieved changes in the properties more stable to thermal and field excitation. The implantation affects the silicon properties owing to accumulation of the radiation damage and the formation of the inclusions of new nanosized phases. The influence of the induced structural-phases inhomogeneities on the properties is determined by the dose of the incorporated ions and annealing conditions. The type of the conduction changes depending on concentration of the defects. The change in properties after annealing obeys to the regularities which are proper for the ion-heat modification of materials. After annealing in the temperature interval of 300-700 K the alternations in the characteristics are stipulated by dissociation of the donor defect complexes. The nanocrystals sintered at 700-1000 K and their size growth stably affect the characteristics. Режим доступа: по договору с организацией-держателем ресурса |
| Idioma: | inglés |
| Publicado: |
2012
|
| Subjects: | |
| Acceso en liña: | http://elibrary.ru/item.asp?id=19015552 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637365 |
MARC
| LEADER | 00000nla0a2200000 4500 | ||
|---|---|---|---|
| 001 | 637365 | ||
| 005 | 20250418104543.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\1482 | ||
| 035 | |a RU\TPU\network\1481 | ||
| 090 | |a 637365 | ||
| 100 | |a 20140902d2012 k||y0rusy50 ca | ||
| 101 | 0 | |a eng | |
| 102 | |a RU | ||
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a High Intensive Short Pulsed Ions Implantation Effect on Electrical and Photoelectrical Properties of Polycrystalline Silicon |f A. V. Kabyshev, F. V. Konusov, G. E. Remnev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [Ref.: p. 61 (24 tit.)] | ||
| 330 | |a The electrical and photoelectrical properties of the polycrystalline silicon after high intensive short pulsed implantation of carbon ions were investigated. A vacuum annealing effect under the pressure of 10 -2 Pa and temperature of 3001200 K on the characteristics of the surface dark conduction and photoconduction was determined. We determined the optimal conditions of thermal treatment during which we achieved changes in the properties more stable to thermal and field excitation. The implantation affects the silicon properties owing to accumulation of the radiation damage and the formation of the inclusions of new nanosized phases. The influence of the induced structural-phases inhomogeneities on the properties is determined by the dose of the incorporated ions and annealing conditions. The type of the conduction changes depending on concentration of the defects. The change in properties after annealing obeys to the regularities which are proper for the ion-heat modification of materials. After annealing in the temperature interval of 300-700 K the alternations in the characteristics are stipulated by dissociation of the donor defect complexes. The nanocrystals sintered at 700-1000 K and their size growth stably affect the characteristics. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Известия вузов. Физика |o научный журнал |d 1957- | ||
| 463 | |t Т. 55, № 12-3 |v [С. 58-61] |d 2012 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a поликристаллический кремний | |
| 610 | 1 | |a ионы | |
| 610 | 1 | |a имплантация | |
| 610 | 1 | |a светочувствительность | |
| 610 | 1 | |a радиационные дефекты | |
| 610 | 1 | |a вакуумный отжиг | |
| 700 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Энергетический институт (ЭНИН) |b Кафедра электроснабжения промышленных предприятий (ЭПП) |3 (RuTPU)RU\TPU\col\18676 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Институт физики высоких технологий (ИФВТ) |b Лаборатория № 1 |3 (RuTPU)RU\TPU\col\19035 |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Физико-технический институт (ФТИ) |b Кафедра водородной энергетики и плазменных технологий (ВЭПТ) |3 (RuTPU)RU\TPU\col\18735 |
| 801 | 2 | |a RU |b 63413507 |c 20150624 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://elibrary.ru/item.asp?id=19015552 | |
| 942 | |c CF | ||