Peculiarities Of Electrophysical Properties Of Arsenide Gallium Films Deposited Under Nonequilibrium Conditions
| Parent link: | Eurasian Physical Technical Journal № 2 (14).— 2010.— [P. 53-59] |
|---|---|
| Další autoři: | , , , , |
| Shrnutí: | Title screen The electrophysical and photoelectrical properties of thin films of arsenide gallium produced by the deposition on substrate of polycrystalline corundum from the ablation plasma, formed by power ions bunch, were investigated. The annealing effect in vacuum and air on the characteristics of dark and photoconduction of films was established. Chalcogenide passivation from the alcohol solution treatment effect and followed annealing in vacuum and air effect on the electrophysical characteristics and photosensitivity of films were investigated. The conditions of the thermal and chemical treatment were determined, in which the most stable properties changes were achieved. The chalcogenide passivation allows improving the films characteristics, to stabilize them and to enhance the stability of a films surface to an oxidation in air. |
| Jazyk: | angličtina |
| Vydáno: |
2010
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| Témata: | |
| On-line přístup: | http://www.ksu.kz/files/Faculties/Physical/Eurasian_Journal/2010_14/11.pdf |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637362 |
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| 200 | 1 | |a Peculiarities Of Electrophysical Properties Of Arsenide Gallium Films Deposited Under Nonequilibrium Conditions |f A. V. Kabyshev, F. V. Konusov, G. E. Remnev [et al.] | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: p. 59 (25 tit.)] | ||
| 330 | |a The electrophysical and photoelectrical properties of thin films of arsenide gallium produced by the deposition on substrate of polycrystalline corundum from the ablation plasma, formed by power ions bunch, were investigated. The annealing effect in vacuum and air on the characteristics of dark and photoconduction of films was established. Chalcogenide passivation from the alcohol solution treatment effect and followed annealing in vacuum and air effect on the electrophysical characteristics and photosensitivity of films were investigated. The conditions of the thermal and chemical treatment were determined, in which the most stable properties changes were achieved. The chalcogenide passivation allows improving the films characteristics, to stabilize them and to enhance the stability of a films surface to an oxidation in air. | ||
| 461 | |t Eurasian Physical Technical Journal | ||
| 463 | |t № 2 (14) |v [P. 53-59] |d 2010 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
| 701 | 1 | |a Lozhnikov |b S. N. | |
| 701 | 1 | |a Saltymakov |b M. S. |c physicist |c Junior researcher of Tomsk Polytechnic University |f 1982- |g Maksim Sergeevich |3 (RuTPU)RU\TPU\pers\34301 | |
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