Optical properties of GaAs films deposited via pulsed ion ablation; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 5, iss. 2

Optical properties of GaAs films deposited via pulsed ion ablation; Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques; Vol. 5, iss. 2

Detalhes bibliográficos
Parent link:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques: Scientific Journal
Vol. 5, iss. 2.— 2011.— [P. 228-235]
Autor principal: Kabyshev A. V. Alexander Vasilievich
Outros Autores: Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich
Resumo:Title screen
Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1–6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300–850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.
Режим доступа: по договору с организацией-держателем ресурса
Idioma:inglês
Publicado em: 2011
Assuntos:
электронный ресурс
труды учёных ТПУ
Acesso em linha:http://link.springer.com/article/10.1134/S1027451011030116
Formato: Recurso Eletrônico Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637361

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