Properties of oxide and nitride ceramics after ion-heat modification

Properties of oxide and nitride ceramics after ion-heat modification

Podrobná bibliografie
Parent link:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Vol. 166-167.— 2000.— [P. 92-97]
Další autoři: Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Kurakov A. G. Andrey Grigorievich, Lopatin V. V. Vladimir Vasilyevich
Shrnutí:Title screen
The parameters of the induced and biographical defects and their complexes in nitride ceramics, in single and in polycrystalline aluminium oxide after ion irradiation and following thermal annealing are studied. An influence of the defects on the charge transport and recombination process and on the optical absorption and photoconduction is determined. General characteristics of defect formation in dielectrics having a different structure and band gap width were established. The localized states of defects are combined into a subband within the band gap as a result of the accumulation and interaction of the induced defects. The charge transport occurs by hopping mechanism within the donor subband and in part by activation mechanism. The largest change of conduction and optical properties is accompanied with Fermi level shift to the conduction band.
Режим доступа: по договору с организацией-держателем ресурса
Vydáno: 2000
Témata:
электронный ресурс
труды учёных ТПУ
теплопроводность
поглощение
On-line přístup:https://doi.org/10.1016/S0168-583X(99)01217-3
Médium: Elektronický zdroj Kapitola
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637348

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