X-ray production by 500 MeV electron beam in a periodically structured monocrystalline target of GaAs
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal Vol. 173, № 1-2.— 2001.— [P. 238-240] |
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| Otros Autores: | Kaplin V. V. Valeriy Viktorovich, Kuznetsov S. I. Sergey Ivanovich, Timchenko N. A., Uglov S. R. Sergey Romanovich, Zabaev V. N. Viktor Nikolaevich |
| Sumario: | Title screen The experiment at the Tomsk synchrotron on generation of 27 keV X-rays by 500 MeV electrons in a new type of a periodical crystalline target is presented. The target has been made on the surface of a GaAs crystal plate by means of microlithography. The etched microstructure is a system of about 300 strips, 14 μm thick, 100 μm high and the gaps between the strips are 29 μm. The measured spectra and orientational dependences of the X-rays emitted at a Bragg angle are discussed. The generated radiation consists of parametric X-ray radiation (PXR) and diffracted X-ray transition radiation (DTR). It is shown that the intensity of the DTR component of generated X-rays is much higher than that of the PXR Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | http://www.sciencedirect.com/science/article/pii/S0168583X00001865 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636682 |
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