Computer simulation of discharge channel propagation in solid dielectric; ICSD '01, 25-29 Jun 2001, Eindhoven, the Netherlands

Λεπτομέρειες βιβλιογραφικής εγγραφής
Parent link:ICSD '01, 25-29 Jun 2001, Eindhoven, the Netherlands.— 2001.— [P. 465-468]
Άλλοι συγγραφείς: Noskov M. D. Mikhail Dmitrievich, Lopatin V. V. Vladimir Vasilyevich, Cheglokov A. A., Shapovalov A. V. Aleksandr Vasilyevich
Περίληψη:Title screen
Investigation of the temporal-spatial, field and current characteristics of the discharge channel propagation is of both scientific and practical interest and may be useful for understanding the nature of the dielectric breakdown of solid dielectrics. The present paper is devoted to the computer simulation of the electrothermal instability development under DC pulse voltage in dielectric material with thermodynamic and electrical properties, which are typical for thermoresistant polymers. The aim of the paper is to clear up the possibility of propagation of the highly conducting channel due to the development of the electrothermal instability
Режим доступа: по договору с организацией-держателем ресурса
Γλώσσα:Αγγλικά
Έκδοση: 2001
Θέματα:
Διαθέσιμο Online:https://doi.org/10.1109/ICSD.2001.955694
Μορφή: Ηλεκτρονική πηγή Κεφάλαιο βιβλίου
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636550
Περιγραφή
Περίληψη:Title screen
Investigation of the temporal-spatial, field and current characteristics of the discharge channel propagation is of both scientific and practical interest and may be useful for understanding the nature of the dielectric breakdown of solid dielectrics. The present paper is devoted to the computer simulation of the electrothermal instability development under DC pulse voltage in dielectric material with thermodynamic and electrical properties, which are typical for thermoresistant polymers. The aim of the paper is to clear up the possibility of propagation of the highly conducting channel due to the development of the electrothermal instability
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.1109/ICSD.2001.955694