Simulation of spark channel formation for electrical discharge technology; Modern Techniques and Technology, 26 Feb-02 Mar 2001, Tomsk

Библиографические подробности
Источник:Modern Techniques and Technology, 26 Feb-02 Mar 2001, Tomsk.— 2001.— [P. 130-135]
Другие авторы: Cheglokov A. A., Noskov M. D. Mikhail Dmitrievich, Lopatin V. V. Vladimir Vasilyevich, Shapovalov A. V. Aleksandr Vasilyevich
Примечания:Title screen
The impulse breakdown of dielectrics is a result of propagation of conducting discharge channels in insulators. The electric field, charge, and energy dynamics within the discharge channels and dielectric material govern the channel growth. In this paper the physical-mathematical model of the discharge channel propagation is presented. The model describes the self-consistent dynamics of temperature, electric field, charge density, and phase transition of the dielectric material to highly conducting state. The discharge channel propagation is associated with the growth of the highly conducting region into the insulator. For computer simulation the model has been realized as a three dimensional numerical algorithm on a cubic lattice. The dynamics of the electric field, charge density, and temperature are calculated on the base of finite-difference approximations of Poisson's equation, continuity equation, and energy conservation law. The phase transition occurs when the temperature of the dielectric exceeds a critical value. The results of computer simulation of the conducting channel formation in nonhomogeneous dielectrics in needle-plane electrode geometry under DC voltage are presented. The effects of conduction inhomogeneities on the channel propagation are discussed
Режим доступа: по договору с организацией-держателем ресурса
Язык:английский
Опубликовано: 2001
Предметы:
Online-ссылка:https://doi.org/10.1109/MTT.2001.983767
Формат: Электронный ресурс Статья
Запись в KOHA:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636549

MARC

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200 1 |a Simulation of spark channel formation for electrical discharge technology  |f A. A. Cheglokov [et al.] 
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300 |a Title screen 
320 |a [Ref.: p. 135 (5 tit.)] 
330 |a The impulse breakdown of dielectrics is a result of propagation of conducting discharge channels in insulators. The electric field, charge, and energy dynamics within the discharge channels and dielectric material govern the channel growth. In this paper the physical-mathematical model of the discharge channel propagation is presented. The model describes the self-consistent dynamics of temperature, electric field, charge density, and phase transition of the dielectric material to highly conducting state. The discharge channel propagation is associated with the growth of the highly conducting region into the insulator. For computer simulation the model has been realized as a three dimensional numerical algorithm on a cubic lattice. The dynamics of the electric field, charge density, and temperature are calculated on the base of finite-difference approximations of Poisson's equation, continuity equation, and energy conservation law. The phase transition occurs when the temperature of the dielectric exceeds a critical value. The results of computer simulation of the conducting channel formation in nonhomogeneous dielectrics in needle-plane electrode geometry under DC voltage are presented. The effects of conduction inhomogeneities on the channel propagation are discussed 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
463 1 |t Modern Techniques and Technology, 26 Feb-02 Mar 2001, Tomsk  |o The 7th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists  |v [P. 130-135]  |f National Research Tomsk Polytechnic University (TPU)  |d 2001 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
701 1 |a Cheglokov  |b A. A. 
701 1 |a Noskov  |b M. D.  |c electrophysicist  |c Leading engineer of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1962-  |g Mikhail Dmitrievich  |3 (RuTPU)RU\TPU\pers\31789 
701 1 |a Lopatin  |b V. V.  |c Doctor of physical and mathematical sciences  |c Professor of Tomsk Polytechnic University (TPU)  |f 1947-  |g Vladimir Vasilyevich  |3 (RuTPU)RU\TPU\pers\30091 
701 1 |a Shapovalov  |b A. V.  |c mathematician  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1949-  |g Aleksandr Vasilyevich  |3 (RuTPU)RU\TPU\pers\31734 
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856 4 |u https://doi.org/10.1109/MTT.2001.983767 
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