Excitation of the 15.1 MeV resonance of C-12 by channeling radiation; Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology; Vol. 125, Iss. 1-3

מידע ביבליוגרפי
Parent link:Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology: Scientific Journal
Vol. 125, Iss. 1-3.— 1993.— [P. 89-92]
מחברים אחרים: Kalinin B. N., Naumenko G. A. Gennadiy Andreevich, Potylitsyn A. P. Alexander Petrovich, Stibunov V. N. Victor Nikolaevich, Vnukov I. E.
סיכום:Title screen
Channeling radiation has been used for excitation of the 15.1 MeV resonance gamma level of a 12C nucleus. Multiplicity effects occuring during radiation emission from (100) silicon crystal at 900 MeV electron incidence were considered
Режим доступа: по договору с организацией-держателем ресурса
שפה:אנגלית
יצא לאור: 1993
נושאים:
גישה מקוונת:http://www.tandfonline.com/doi/abs/10.1080/10420159308225486#.Up1fONK8A7o
פורמט: אלקטרוני Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636372
תיאור
סיכום:Title screen
Channeling radiation has been used for excitation of the 15.1 MeV resonance gamma level of a 12C nucleus. Multiplicity effects occuring during radiation emission from (100) silicon crystal at 900 MeV electron incidence were considered
Режим доступа: по договору с организацией-держателем ресурса