Механические характеристики силумина заэвтектического состава, подвергнутого ионно-элекронно-плазменной модификации; Перспективы развития фундаментальных наук; Т. 1 : Физика
| Parent link: | Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XV Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 24-27 апреля 2018 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; под ред. И. А. Курзиной, Г. А. Вороновой.— , 2018 Т. 1 : Физика.— 2018.— [С. 268-270] |
|---|---|
| Hlavní autor: | |
| Korporace: | , |
| Další autoři: | , , |
| Shrnutí: | Заглавие с экрана In this paper, the possibility of modifying the surface of a hypereutectic silumin (Al-(18-24) wt.%Si) is shown. Modification of the samples was carried out in two stages. At the first stage, a "film (Zr-5% Ti-5% Cu) / (Al- (18-24) wt.% Si) film system was formed by an ion-plasma method with an arc-sputtering of a Zr-5% Ti-5 cathode % Cu in the "TRIO" installation (IHCE SB RAS). In the second stage, the surface layer of the silumin of the hypereutectic composition was doped by melting the "film-substrate" system with an intense pulsed electron beam at the "SOLO" installation. |
| Jazyk: | ruština |
| Vydáno: |
2018
|
| Témata: | |
| On-line přístup: | http://earchive.tpu.ru/handle/11683/51008 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=627444 |
| Shrnutí: | Заглавие с экрана In this paper, the possibility of modifying the surface of a hypereutectic silumin (Al-(18-24) wt.%Si) is shown. Modification of the samples was carried out in two stages. At the first stage, a "film (Zr-5% Ti-5% Cu) / (Al- (18-24) wt.% Si) film system was formed by an ion-plasma method with an arc-sputtering of a Zr-5% Ti-5 cathode % Cu in the "TRIO" installation (IHCE SB RAS). In the second stage, the surface layer of the silumin of the hypereutectic composition was doped by melting the "film-substrate" system with an intense pulsed electron beam at the "SOLO" installation. |
|---|