Fabrication of 2D based pn junctions with improved performance by selective laser annealing

Fabrication of 2D based pn junctions with improved performance by selective laser annealing

Detalles Bibliográficos
Parent link:Высокие технологии в современной науке и технике (ВТСНТ-2017): сборник научных трудов VI Международной научно-технической конференции молодых ученых, аспирантов и студентов, г. Томск, 27–29 ноября 2017 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; под ред. А. Н. Яковлева. [С. 125].— , 2017
Outros autores: Ma Bing, Rodriguez (Rodriges) Contreras R. D. Raul David, Lipovka A. A. Anna Anatolyevna, Nekrasova T., Murastov G. V. Gennadiy Viktorovich, Nozdrina O. V. Olga Vladimirovna
Summary:Заглавие с титульного экрана
There is a growing body of research on transistors based on nanomaterials such as 2D transition metal dichalcogenides (TMDs) (WS2, MoS2, etc.) and carbon nanotubes (CNTs). Here we co-deposited MoS2 and WS2 as PN junctions. The deposition could be performed on a PCB (printed circuit board) with Cu electrodes. The current-voltage characteristics were obtained using an Arduino board. The effect of laser irradiation could be investigated by studying the IV curves and light sensitivity for the same kind of devices in which one of the Cu electrodes was modified by a laser. The IV curves from the devices with and without laser treatment could be compared to quantify the changes in performance.
Publicado: 2017
Series:Оптические технологии
Subjects:
электронные ресурсы
труды учёных ТПУ
лазерный отжиг
2D
соединения
производительность
наноматериалы
вольт-амперные характеристики
Acceso en liña:http://earchive.tpu.ru/handle/11683/45505
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=625368

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