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00000naa2a2200000 4500 |
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625368 |
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20241028152000.0 |
| 035 |
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|a (RuTPU)RU\TPU\conf\24628
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|a RU\TPU\conf\24623
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| 090 |
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|a 625368
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|a 20171212d2017 k y0rusy50 ba
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| 101 |
0 |
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|a eng
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| 102 |
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|a RU
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|a y z 101zy
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| 135 |
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|a drcn ---uucaa
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| 181 |
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|a i
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| 182 |
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0 |
|a b
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| 200 |
1 |
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|a Fabrication of 2D based pn junctions with improved performance by selective laser annealing
|f Ma Bing [et al.]
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| 203 |
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|a Текст
|c электронный
|
| 225 |
1 |
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|a Оптические технологии
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| 300 |
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|a Заглавие с титульного экрана
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| 320 |
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|a [Библиогр.: с. 125 (1 назв.)]
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| 330 |
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|a There is a growing body of research on transistors based on nanomaterials such as 2D transition metal dichalcogenides (TMDs) (WS2, MoS2, etc.) and carbon nanotubes (CNTs). Here we co-deposited MoS2 and WS2 as PN junctions. The deposition could be performed on a PCB (printed circuit board) with Cu electrodes. The current-voltage characteristics were obtained using an Arduino board. The effect of laser irradiation could be investigated by studying the IV curves and light sensitivity for the same kind of devices in which one of the Cu electrodes was modified by a laser. The IV curves from the devices with and without laser treatment could be compared to quantify the changes in performance.
|
| 463 |
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1 |
|0 (RuTPU)RU\TPU\conf\24481
|t Высокие технологии в современной науке и технике (ВТСНТ-2017)
|o сборник научных трудов VI Международной научно-технической конференции молодых ученых, аспирантов и студентов, г. Томск, 27–29 ноября 2017 г.
|f Национальный исследовательский Томский политехнический университет (ТПУ) ; под ред. А. Н. Яковлева
|v [С. 125]
|d 2017
|
| 610 |
1 |
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|a электронные ресурсы
|
| 610 |
1 |
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|a труды учёных ТПУ
|
| 610 |
1 |
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|a лазерный отжиг
|
| 610 |
1 |
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|a 2D
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| 610 |
1 |
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|a соединения
|
| 610 |
1 |
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|a производительность
|
| 610 |
1 |
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|a наноматериалы
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| 610 |
1 |
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|a вольт-амперные характеристики
|
| 701 |
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0 |
|a Ma Bing
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| 701 |
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1 |
|a Rodriguez (Rodriges) Contreras
|b R. D.
|c Venezuelan physicist, doctor of science
|c Professor of Tomsk Polytechnic University
|f 1982-
|g Raul David
|3 (RuTPU)RU\TPU\pers\39942
|9 21179
|
| 701 |
|
1 |
|a Lipovka
|b A. A.
|c chemist
|c Associate Scientist of Tomsk Polytechnic University
|f 1993-
|g Anna Anatolyevna
|y Tomsk
|3 (RuTPU)RU\TPU\pers\44078
|9 21753
|
| 701 |
|
1 |
|a Nekrasova
|b T.
|
| 701 |
|
1 |
|a Murastov
|b G. V.
|c Specialist in the field of lightning engineering
|c Assistant of the Department of Tomsk Polytechnic University
|f 1989-
|g Gennadiy Viktorovich
|3 (RuTPU)RU\TPU\pers\37695
|9 20489
|
| 701 |
|
1 |
|a Nozdrina
|b O. V.
|c specialist in the field of lightning engineering
|c engineer of Tomsk Polytechnic University
|f 1990-
|g Olga Vladimirovna
|3 (RuTPU)RU\TPU\pers\44784
|9 21846
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20191016
|g RCR
|
| 856 |
4 |
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|u http://earchive.tpu.ru/handle/11683/45505
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| 942 |
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|c BK
|
