Atomic structure of self-assembled InAs/AlAs quantum dots: effect of electron irradiation and annealing; 3rd International Congress on Radiation Physics and Chemistry of Condensed Matter, High Current Electronics and Modification of Materials with Particle Beams and Plasma Flows

Atomic structure of self-assembled InAs/AlAs quantum dots: effect of electron irradiation and annealing; 3rd International Congress on Radiation Physics and Chemistry of Condensed Matter, High Current Electronics and Modification of Materials with Particle Beams and Plasma Flows

Dettagli Bibliografici
Parent link:	3rd International Congress on Radiation Physics and Chemistry of Condensed Matter, High Current Electronics and Modification of Materials with Particle Beams and Plasma Flows.— 2012.— [P. 134-135]
Autore principale:	Shamirzaev T. S. Timur Sezgirovich
Ente Autore:	National Research Tomsk Polytechnic University (TPU)
Altri autori:	Bakarov A. K. Askhat Klimovich, Yakovlev V. Yu. Viktor Yurjevich
Riassunto:	Title screen
Lingua:	inglese
Pubblicazione:	2012
Soggetti:	электронный ресурс труды учёных ТПУ
Accesso online:	http://www.lib.tpu.ru/fulltext/c/2012/C54/018.pdf
Natura:	Elettronico Capitolo di libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=621895

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