Плазмодинамический синтез нитрида алюминия в системах с газообразным и твердым прекурсором
| Parent link: | Перспективы развития фундаментальных наук=Prospects of fundamental sciences development: сборник научных трудов XII Международной конференция студентов и молодых ученых, г. Томск, 21-24 апреля 2015 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; Национальный исследовательский Томский государственный университет (ТГУ) ; Томский государственный архитектурно-строительный университет (ТГАСУ) ; Томский государственный университет систем управления и радиоэлектроники (ТУСУР) ; ред. кол. И. А. Курзина ; Г. А. Воронова ; С. А. Поробова. [С. 1143-1145].— , 2015 |
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| Summary: | Заглавие с экрана Aluminum nitride is prospective material due to its high thermal conductivity. This paper shows the results of obtaining of aluminum nitride by plasma dynamic method in systems with gaseous (nitrogen N2) and solid (melamine C[3]N[6]H[6]) precursors. Synthesized products were investigated using XRD and TEM analyses. According to TEM products predominantly consist of well-crystallized single crystals of aluminum nitride with particle size 60-120 nm and small amount of aluminum particles. The results of XRD show that using of solid precursors is more preferable in the area of obtaining AlN phase but the product has a lot of impurities. |
| Language: | Russian |
| Published: |
2015
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| Series: | Наноматериалы и нанотехнологии |
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| Online Access: | http://earchive.tpu.ru/handle/11683/19091 http://www.lib.tpu.ru/fulltext/c/2015/C21/364.pdf |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=613202 |
| Physical Description: | 1 файл(340 Кб) |
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| Summary: | Заглавие с экрана Aluminum nitride is prospective material due to its high thermal conductivity. This paper shows the results of obtaining of aluminum nitride by plasma dynamic method in systems with gaseous (nitrogen N2) and solid (melamine C[3]N[6]H[6]) precursors. Synthesized products were investigated using XRD and TEM analyses. According to TEM products predominantly consist of well-crystallized single crystals of aluminum nitride with particle size 60-120 nm and small amount of aluminum particles. The results of XRD show that using of solid precursors is more preferable in the area of obtaining AlN phase but the product has a lot of impurities. |