Влияние энергии плазменной струи на продукт плазмодинамического синтеза в системе SI-C
| Parent link: | Перспективы развития фундаментальных наук=Prospects of fundamental sciences development: сборник научных трудов XII Международной конференция студентов и молодых ученых, г. Томск, 21-24 апреля 2015 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; Национальный исследовательский Томский государственный университет (ТГУ) ; Томский государственный архитектурно-строительный университет (ТГАСУ) ; Томский государственный университет систем управления и радиоэлектроники (ТУСУР) ; ред. кол. И. А. Курзина ; Г. А. Воронова ; С. А. Поробова. [С. 1043-1045].— , 2015 |
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| Summary: | Заглавие с экрана Synthesis of silicon carbide is interested due to the presence of a wide range of his unique mechanical, thermal and electrical properties: superhardness, strength, thermal and corrosion resistance, radiation hardness, unique semiconductor characteristics. There is a great number of nano-SiC synthesis techniques, but the unique mentioned properties of the produced SiC cannot be generally realized due to dependence on the synthesis methods. In this connection the development of new simple and productive methods for the direct synthesis of nanodispersed high-quality silicon carbide is an important problem. The paper presents the results of the plasmodynamic synthesis and the ability to control the synthesis process and to change product characteristics by the plasma jet energy. The above method can be realized in a high-speed pulse jet of the dense Si-C. The jet is generated by a pulse (~100 μs) high-current (~100 A) coaxial magnetoplasma accelerator with graphite electrodes. The synthesized product was analyzed by some modern techniques as X-ray diffraction. The main result of the paper is a demonstration of the capabilities plasmodynamic synthesis of nanosized cubic silicon carbide. Change of the input energy level can influence on phase composition, crystals growth and particle sizes. |
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2015
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| Series: | Наноматериалы и нанотехнологии |
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| Online Access: | http://earchive.tpu.ru/handle/11683/19065 http://www.lib.tpu.ru/fulltext/c/2015/C21/332.pdf |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=613157 |
| Physical Description: | 1 файл(279 Кб) |
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| Summary: | Заглавие с экрана Synthesis of silicon carbide is interested due to the presence of a wide range of his unique mechanical, thermal and electrical properties: superhardness, strength, thermal and corrosion resistance, radiation hardness, unique semiconductor characteristics. There is a great number of nano-SiC synthesis techniques, but the unique mentioned properties of the produced SiC cannot be generally realized due to dependence on the synthesis methods. In this connection the development of new simple and productive methods for the direct synthesis of nanodispersed high-quality silicon carbide is an important problem. The paper presents the results of the plasmodynamic synthesis and the ability to control the synthesis process and to change product characteristics by the plasma jet energy. The above method can be realized in a high-speed pulse jet of the dense Si-C. The jet is generated by a pulse (~100 μs) high-current (~100 A) coaxial magnetoplasma accelerator with graphite electrodes. The synthesized product was analyzed by some modern techniques as X-ray diffraction. The main result of the paper is a demonstration of the capabilities plasmodynamic synthesis of nanosized cubic silicon carbide. Change of the input energy level can influence on phase composition, crystals growth and particle sizes. |