Осаждение барьерных слоев на основе нитрида титана с помощью дуальной МРС; Перспективы развития фундаментальных наук
| Parent link: | Перспективы развития фундаментальных наук.— 2015.— [С. 125-127] |
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| Andre forfattere: | , |
| Summary: | Заглавие с экрана The titanium nitride (TiN) thin films of polycrystalline structure (110), (200) and (220) with elasticmodulus 153.2…395.7 GPa were obtained by means of magnetron sputtering of titanium cathode in argon andnitrogen. The electrical resistance of the samples is in the range of 0.15 ... 1.24 m[omega]·cm. The effects of phasecomposition, microstructure, morphology and physical-mechanical properties of TiN on d[s-t] and N[2] flow rate arepresented. |
| Sprog: | russisk |
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2015
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| Serier: | Физика |
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| Online adgang: | http://earchive.tpu.ru/handle/11683/19128 http://www.lib.tpu.ru/fulltext/c/2015/C21/032.pdf |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=612939 |