The reliability of the power semiconductor module on the operating temperature; Интеллектуальные энергосистемы; Т. 1
| Parent link: | Интеллектуальные энергосистемы: труды II Международного молодёжного форума, 6-10 октября 2014 г., г. Томск/ Национальный исследовательский Томский политехнический университет (ТПУ).— , 2014 Т. 1.— 2014.— [P. 59-66] |
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| Özet: | Заглавие с титульного экрана A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural con-vection and obtained by using statistical data analysis. The integrated assess-ment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices. |
| Dil: | İngilizce |
| Baskı/Yayın Bilgisi: |
2014
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| Seri Bilgileri: | Теплофизика и теоретическая теплотехника |
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| Online Erişim: | http://www.lib.tpu.ru/fulltext/c/2014/C43/V1/015.pdf |
| Materyal Türü: | MixedMaterials Elektronik Kitap Bölümü |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=608902 |