Nanosecond high current and high repetition rate electron source
| Parent link: | Proceedings of the 17th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, Berkeley, CA, july 21-26, 1996.— , 1996 Vol. 27, № 4.— 1996.— P. 1055-1059 |
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| مؤلفون آخرون: | , , , |
| الملخص: | A broad electron beam source with a plasma hollow cathode has been developed which is intended for production of nanosecond electron beams with a high repetition rate. The source lifetime is over 109 shots. To reduce the operating pressure and shorten the time required for the formation of plasma in the cathode cavity, an auxiliary triggering glow discharge with a hollow cathode is used. With an accelerating voltage of 40 kV a pulse repetition rate of 50-1000 Hz, and a pulse duration of 100 ns, an electron beam of current up to 200 A and risetime 25 ns has been produced. В фонде НТБ ТПУ отсутствует |
| اللغة: | الإنجليزية |
| منشور في: |
1996
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| الموضوعات: | |
| التنسيق: | فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=602544 |
MARC
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| 200 | 1 | |a Nanosecond high current and high repetition rate electron source |f V. I. Gushenets [et al.] | |
| 330 | |a A broad electron beam source with a plasma hollow cathode has been developed which is intended for production of nanosecond electron beams with a high repetition rate. The source lifetime is over 109 shots. To reduce the operating pressure and shorten the time required for the formation of plasma in the cathode cavity, an auxiliary triggering glow discharge with a hollow cathode is used. With an accelerating voltage of 40 kV a pulse repetition rate of 50-1000 Hz, and a pulse duration of 100 ns, an electron beam of current up to 200 A and risetime 25 ns has been produced. | ||
| 333 | |a В фонде НТБ ТПУ отсутствует | ||
| 461 | |t Proceedings of the 17th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, Berkeley, CA, july 21-26, 1996 |d 1996 | ||
| 463 | |t Vol. 27, № 4 |v P. 1055-1059 |d 1996 | ||
| 610 | 1 | |a труды учёных ТПУ | |
| 701 | 1 | |a Gushenets |b V. I. | |
| 701 | 1 | |a Koval |b N. N. |c specialist in the field of electronics |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Nikolay Nikolaevich |3 (RuTPU)RU\TPU\pers\34748 | |
| 701 | 1 | |a Schanin |b P. M. | |
| 701 | 1 | |a Tolkachev |b V. S. | |
| 801 | 1 | |a RU |b 63413507 |c 20110808 | |
| 801 | 2 | |a RU |b 63413507 |c 20160609 |g RCR | |
| 942 | |c CR | ||