The radiation defects introduction in InP Shottky diodes
| Parent link: | Девятая конференция "Арсенид галлия и полупроводниковые соединения группы III-V" (3-5 октября 2006 г., Томск, Россия) : материалы конференции=Ninth conference "Gallium arsenide and III-V group related compounds". 3-5 October, 2006, Tomsk, Russia. "GaAs - 2006". С. 371-374.— , 2006 |
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| मुख्य लेखक: | Peshev V. V. |
| अन्य लेखक: | Soboleva E. G. Elvira Gomerovna |
| सारांश: | В фонде НТБ ТПУ отсутствует |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2006
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| विषय: | |
| स्वरूप: | पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=601356 |
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समान संसाधन
-
Defect formation into Schottky barrier on InP
द्वारा: Peshev V. V.
प्रकाशित: (2006) -
The regularities of radiation defect formation at the interface metal -n-InP
द्वारा: Soboleva E. G. Elvira Gomerovna
प्रकाशित: (2016) -
Defects in GaAs produced with fast neutrons and protons
द्वारा: Peshev V. V.
प्रकाशित: (2007) -
Полупроводниковые плёнки InP полученные методом импульсного ионного осаждения
प्रकाशित: (2007) -
Radiation Model of Light Emitting Diode Based on AlGaInP Heterostructures with Multiple Quantum Wells
द्वारा: Gradoboev A. V. Aleksandr Vasilyevich
प्रकाशित: (2014)