Investigation of the Characteristics of CMOS ICs at Low Temperatures; Instruments and Experimental Techniques; Vol. 40, № 4

Sonraí bibleagrafaíochta
Parent link:Instruments and Experimental Techniques: journal.— , 1958-
Vol. 40, № 4.— 1997.— P. 581-584
Príomhchruthaitheoir: Uchaykin (Uchaikin) S. V. Sergey Victorovich
Achoimre:Certain types of complementary metal–oxide–semiconductor (CMOS) and high-speed comple-mentary metal–oxide–semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the frame01564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K.
В фонде НТБ ТПУ отсутствует
Teanga:Béarla
Foilsithe / Cruthaithe: 1997
Ábhair:
Formáid: Caibidil leabhair
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=600848

MARC

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200 1 |a Investigation of the Characteristics of CMOS ICs at Low Temperatures  |f S. V. Uchaykin (Uchaikin) 
330 |a Certain types of complementary metal–oxide–semiconductor (CMOS) and high-speed comple-mentary metal–oxide–semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the frame01564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K. 
333 |a В фонде НТБ ТПУ отсутствует 
461 |t Instruments and Experimental Techniques  |o journal  |d 1958- 
463 |t Vol. 40, № 4  |v P. 581-584  |d 1997 
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700 1 |a Uchaykin (Uchaikin)  |b S. V.  |c specialist in the field of non-destructive testing  |c Engineer of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |f 1963-  |g Sergey Victorovich  |3 (RuTPU)RU\TPU\pers\32279 
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