Investigation of the Characteristics of CMOS ICs at Low Temperatures; Instruments and Experimental Techniques; Vol. 40, № 4
| Parent link: | Instruments and Experimental Techniques: journal.— , 1958- Vol. 40, № 4.— 1997.— P. 581-584 |
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| Egile nagusia: | |
| Gaia: | Certain types of complementary metal–oxide–semiconductor (CMOS) and high-speed comple-mentary metal–oxide–semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the frame01564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K. В фонде НТБ ТПУ отсутствует |
| Hizkuntza: | ingelesa |
| Argitaratua: |
1997
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| Gaiak: | |
| Formatua: | Liburu kapitulua |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=600848 |
| Gaia: | Certain types of complementary metal–oxide–semiconductor (CMOS) and high-speed comple-mentary metal–oxide–semiconductor (HCMOS) integrated circuits (ICs) were investigated at temperatures T from 1.4 to 297 K. Basic parameters of integrated multiplexers operating at liquid helium temperature were measured. Integrated circuits of the frame01564 and 74HC family fabricated by HCMOS technology exhibited the best characteristics at T = 4.2 K. В фонде НТБ ТПУ отсутствует |
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