Role of tension in microstructure formation in pure metals affected by ion implantation

Role of tension in microstructure formation in pure metals affected by ion implantation

Dades bibliogràfiques
Parent link:Nuclear Instruments and Methods in Physics Research. Sec. B: Beam Interactions with Materials and Atoms
Vol. 61, № 4.— 1991.— P. 441-445
Altres autors: Didenko A. N., Ligachev A. E., Sharkeev Yu. P., Pushkareva G. V., Kozlov E. V., Ryabchikov A. I. Aleksandr Ilyich, Nasyrov R. A., Shakhmeister G. I.
Sumari:Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.
В фонде НТБ ТПУ отсутствует
Idioma:anglès
Publicat: 1991
Matèries:
труды учёных ТПУ
Format: Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599651

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