Role of tension in microstructure formation in pure metals affected by ion implantation; Nuclear Instruments and Methods in Physics Research. Sec. B: Beam Interactions with Materials and Atoms; Vol. 61, № 4
| Parent link: | Nuclear Instruments and Methods in Physics Research. Sec. B: Beam Interactions with Materials and Atoms Vol. 61, № 4.— 1991.— P. 441-445 |
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| Andre forfattere: | , , , , , , , |
| Summary: | Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure. В фонде НТБ ТПУ отсутствует |
| Sprog: | engelsk |
| Udgivet: |
1991
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| Fag: | |
| Format: | xMaterials Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599651 |
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| 200 | 1 | |a Role of tension in microstructure formation in pure metals affected by ion implantation |f A. N. Didenko [et al.] | |
| 330 | |a Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure. | ||
| 333 | |a В фонде НТБ ТПУ отсутствует | ||
| 461 | |t Nuclear Instruments and Methods in Physics Research. Sec. B: Beam Interactions with Materials and Atoms | ||
| 463 | |t Vol. 61, № 4 |v P. 441-445 |d 1991 | ||
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| 701 | 1 | |a Pushkareva |b G. V. | |
| 701 | 1 | |a Kozlov |b E. V. | |
| 701 | 1 | |a Ryabchikov |b A. I. |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |c physicist |f 1950- |g Aleksandr Ilyich |3 (RuTPU)RU\TPU\pers\30912 | |
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