Electronic processes in oxide glassy semiconductors and thin-film structures based on them; Soviet Physics Journal; Vol. 30, № 6
| Parent link: | Soviet Physics Journal.— , 1965-1992 Vol. 30, № 6.— 1987.— P. 461-474 |
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| 1. autor: | |
| Kolejni autorzy: | , |
| Streszczenie: | The physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V 2O 5 is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also В фонде НТБ ТПУ отсутствует |
| Język: | angielski |
| Wydane: |
1987
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| Hasła przedmiotowe: | |
| Format: | MixedMaterials Rozdział |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599617 |
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| 200 | 1 | |a Electronic processes in oxide glassy semiconductors and thin-film structures based on them |f V. I. Gaman, V. I. Kosintsev, V. M. Kalygina | |
| 320 | |a References: p. 473-474 (61 tit.) | ||
| 330 | |a The physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V 2O 5 is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also | ||
| 333 | |a В фонде НТБ ТПУ отсутствует | ||
| 461 | |t Soviet Physics Journal |d 1965-1992 | ||
| 463 | |t Vol. 30, № 6 |v P. 461-474 |d 1987 | ||
| 610 | 1 | |a труды учёных ТПУ | |
| 700 | 1 | |a Gaman |b V. I. | |
| 701 | 1 | |a Kosintsev |b V. I. |c Chemical Engineer |c consulting professor, Doctor of technical sciences |f 1939- |g Victor Ivanovich |3 (RuTPU)RU\TPU\pers\31066 | |
| 701 | 1 | |a Kalygina |b V. M. | |
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| 801 | 2 | |a RU |b 63413507 |c 20130926 |g RCR | |
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