Polaron jump conductivity in films of vitreous oxide semiconductors in an intense DC magnetic field
| Parent link: | Soviet Physics Journal.— , 1965-1992 Vol. 31, № 12.— 1988.— P. 1038-1042 |
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| Summary: | Experimental data on the field dependence of static conductivity of vitreous oxide semiconductors (VOS) based on V 2O 5 are analyzed. To describe the effects of an intense electric field a model is proposed which assumes localization of small radius polarons (SRP) by the Coulomb field of positively charged defect centers (the bound SRP model). Within the framework of this model an expression is obtained which defines the flux density of charge carriers (J) in an electric field of arbitrary intensity (F), which in the limit of an intense electric field leads to a linear dependence of ln J on F 1/2. With the parameters found for the model the calculated function J(F) agrees well with experimental dependences of current upon F for VOS films in the vanadium-borate system. The most probable nature of defect centers in the given materials is anion (oxygen) vacancies. The results obtained agree with a previous analysis of field dependence of low-frequency dielectric permittivity also based on the bound SRP model В фонде НТБ ТПУ отсутствует |
| Published: |
1988
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| Format: | Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599613 |
| Summary: | Experimental data on the field dependence of static conductivity of vitreous oxide semiconductors (VOS) based on V 2O 5 are analyzed. To describe the effects of an intense electric field a model is proposed which assumes localization of small radius polarons (SRP) by the Coulomb field of positively charged defect centers (the bound SRP model). Within the framework of this model an expression is obtained which defines the flux density of charge carriers (J) in an electric field of arbitrary intensity (F), which in the limit of an intense electric field leads to a linear dependence of ln J on F 1/2. With the parameters found for the model the calculated function J(F) agrees well with experimental dependences of current upon F for VOS films in the vanadium-borate system. The most probable nature of defect centers in the given materials is anion (oxygen) vacancies. The results obtained agree with a previous analysis of field dependence of low-frequency dielectric permittivity also based on the bound SRP model В фонде НТБ ТПУ отсутствует |
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