Electrical properties of mim structures based on vanadium-borate glass

Electrical properties of mim structures based on vanadium-borate glass

Dades bibliogràfiques
Parent link:Soviet Physics Journal.— , 1965-1992
Vol. 24, № 3.— 1981.— P. 262-266
Altres autors: Kalygina V. M., Kosintsev V. I. Victor Ivanovich, Gaman V. I., Modebadze O. E., Nikolaev A. I.
Sumari:The results are given of investigation of the dc and ac electrical properties of thin-film metal-insulator-metal structures of capacitor type based on glass of the composition 35% B2O3-15% CaO-20% V2O4-30% V2O5 (wt.%). The glass films were deposited by an explosive method on a glassceramic substrate at t°=80°C. Upper and lower Nichrome electrodes were obtained by thermal evaporation. The influence of annealing on the conductivity and current-voltage characteristics of such structures was investigated. It was found that the current-voltage characteristics before and after annealing are determined in a wide range of temperatures and constant electric fields by contact barriers on the metal-glass-film interface. The ac behavior of the samples at f >102 Hz is due to the bulk properties of the glass film
В фонде НТБ ТПУ отсутствует
Publicat: 1981
Matèries:
труды учёных ТПУ
Format: Capítol de llibre
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=599529

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